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Synthesis, Structure, And Properties Of Boron- And Nitrogen-Doped Graphene

L. S. Panchakarla, K. Subrahmanyam, S. Saha, A. Govindaraj, H. R. Krishnamurthy, U. Waghmare, C. Rao
Published 2009 · Materials Science, Physics

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Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
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