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Curved Two-Dimensional Electron Systems In Semiconductor Nanoscrolls

Karen Peters, S. Mendach, W. Hansen
Published 2010 · Physics

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The perfect control of strain and layer thickness in epitaxial semiconductor bilayers is employed to fabricate semiconductor nanoscrolls with precisely adjusted scroll diameter ranging between a few nanometers and several tens of microns. Furthermore, semiconductor heteroepitaxy allows us to incorporate quantum objects such as quantum wells, quantum dots, or modulation doped low-dimensional carrier systems into the nanoscrolls. In this review, we summarize techniques that we have developed to fabricate semiconductor nanoscrolls with well-defined location, orientation, geometry, and winding number. We focus on magneto-transport studies of curved two-dimensional electron systems in such nanoscrolls. An externally applied magnetic field results in a strongly modulated normal-to-surface component leading to magnetic barriers, reflection of edge channels, and local spin currents. The observations are compared to finite-element calculations and discussed on the basis of simple models taking into account the influence of a locally modulated state density on the conductivity. In particular, it is shown that the observations in high magnetic fields can be well described considering the transport in edge channels according to the Landauer–Buttiker model if additional magnetic field induced channels aligned along magnetic barriers are accounted for.
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