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High Capacity Organic Memory Structures Based On PVP As The Insulating Layer

S. Fakher, M. F. Alias, P. Sayers, M. Mabrook
Published 2018 · Materials Science

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The electrical behaviour of organic memory structures based on gold nanoparticles (AuNPs) and poly 4-vinylphenol as the gate dielectric are reported in this work. Metal–insulator–semiconductor (MIS) and thin film transistor structures were used to fabricate the control and memory devices. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of AuNps embedded within the insulating layer were used as the floating gate. All memory devices exhibited clear hysteresis in their electrical characteristics [capacitance–voltage (C–V) for MIS structures as well as output and transfer characteristics for transistors]. Both structures were shown to produce reliable and large memory windows by virtue of high capacity. The hysteresis in the output and transfer characteristics and shifts in the threshold voltage of the transfer characteristics as well as flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the AuNPs floating gate. Memory window of 38 V was achieved by scanning the applied voltage of the MIS structure between 40 and − 40 V. Similarly, a memory window of 27 V was achieved for the TFT-based memory structure. Under an appropriate gate bias of 1 s pulses, the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses of as low as 5 V resulted in a clear write and erase states.
This paper references
10.1016/J.MEE.2013.03.157
Nonvolatile organic memory devices with CdTe quantum dots
Hyun-Gyo Kim (2013)
10.1021/CM049614J
Recent Progress in Organic Electronics: Materials, Devices, and Processes
T. W. Kelley (2004)
10.1063/1.3046115
A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers
Ming-Feng Chang (2008)
Eur
S. J. Fakher (1020)
10.1021/CM0496117
Thin Film Deposition, Patterning, and Printing in Organic Thin Film Transistors
Mang Mang Ling and (2004)
10.1063/1.1448659
Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates
C. Sheraw (2002)
10.1126/SCIENCE.283.5403.822
Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
Dimitrakopoulos (1999)
10.1063/1.3223606
Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.
S. William (2009)
10.1002/ADFM.200400486
The Effect of Gate‐Dielectric Surface Energy on Pentacene Morphology and Organic Field‐Effect Transistor Characteristics
S. Y. Yang (2005)
10.1063/1.3126021
A pentacene-based organic thin film memory transistor
M. F. Mabrook (2009)
10.1039/C3TC32460E
The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer
Ming-dong Yi (2014)
10.1007/s11664-015-3692-x
Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles
Razan Nejm (2015)
10.1016/J.SNB.2011.11.012
Fabrication of stable low voltage organic bistable memory device
C. V. Ramana (2012)
10.1016/J.ORGEL.2015.05.007
Memory stabilities and mechanisms of organic bistable devices with giant memory margins based on Cu2ZnSnS4 nanoparticles/PMMA nanocomposites
D. Y. Yun (2015)
10.1051/EPJAP/2012120288
Fabrication and characterization of nonvolatile organic thin film memory transistors operating at low programming voltages
S. Fakher (2012)
10.1515/9783111413426-022
U
Lan Ma (1824)
10.1021/nl1009662
Flexible organic transistor memory devices.
S. Kim (2010)
10.1007/978-0-387-21720-8
Organic Light-Emitting Devices
J. Shinar (2004)
10.1063/1.4737599
Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)
A. Sleiman (2012)
10.1021/cr900150b
Materials and applications for large area electronics: solution-based approaches.
A. C. Arias (2010)
10.1063/1.3212736
Solution processed low-voltage organic transistors and complementary inverters
J. M. Ball (2009)
10.1063/1.1511826
High-mobility polymer gate dielectric pentacene thin film transistors
H. Klauk (2002)
10.1063/1.1491009
Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
M. Shtein (2002)
10.1063/1.1379059
Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
G. Vélu (2001)
10.1016/J.ORGEL.2016.02.034
The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices
Ming-dong Yi (2016)
10.1016/J.ORGEL.2016.05.008
High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis
Y. Zhang (2016)
10.1038/nature02498
The path to ubiquitous and low-cost organic electronic appliances on plastic
S. Forrest (2004)
10.1063/1.122257
Vertical device architecture by molding of organic-based thin film transistor
F. Garnier (1998)
10.1126/science.265.5179.1684
All-Polymer Field-Effect Transistor Realized by Printing Techniques
F. Garnier (1994)
10.1016/J.ORGEL.2008.05.023
Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures
M. Mabrook (2008)
10.1063/1.1929850
Correlation between morphology and ambipolar transport in organic field-effect transistors
T. B. Singh (2005)
10.1063/1.3675856
Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate
Adam Sleiman (2012)
10.1002/ADFM.201700461
Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices
H. Yu (2017)
10.1063/1.3076115
Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si
Rotem Har-lavan (2009)
10.1002/ADMA.200601434
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
Kang-Jun Baeg (2006)
10.1016/J.SYNTHMET.2017.07.016
Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor
S. Ruzgar (2017)



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