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Phase Diagram And Electrical Behavior Of Silicon-rich Iridium Silicide Compounds

C. Allevato, C. B. Vining
Published 1993 · Materials Science

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The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis (DTA), metallography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only five distinct compositions: IrSi, Ir4Si5, Ir3Si4, Ir3Si5 and IrSi≈3. The existence of Ir2Si3, Ir4Si7, and IrSi2 could not be confirmed in this study. DTA in conjunction with X-ray powder diffraction confirm polymorphism in IrSi≈3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 80.5 ± 1 at.% Si was observed between IrSi≈3 and silicon. Both Ir4Si5 and Ir3Si4 exhibit distinct metallic behavior while Ir3Si5 is semiconducting. IrSi and IrSi≈3 exhibit nearly temperature-independent electrical resistivities on the order of (5–10) × 10−6ω m.
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