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Oxygen Passivation Of Silicon Nanocrystals: Influences On Trap States, Electron Mobility, And Hybrid Solar Cell Performance

Y. Ding, Michihiro Sugaya, Q. Liu, S. Zhou, T. Nozaki
Published 2014 · Materials Science

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Abstract Surface quality of nanostructures has a significant influence on related device performance. In this study, a large number of dangling bonds are detected on the silicon nanocrystal (Si NC) surface after surface modification. These dangling bonds work as carrier traps and degrade particle electrical properties. Therefore, controlled particle oxidization is proposed as a substitution method for surface passivation, which can reduce carrier traps easily and effectively. Electron mobility is improved dramatically after a 12-hour controlled oxidation, and as a result, Si NC/PTB7 hybrid solar cells (HSC) achieves an efficiency of 3.6%; this is more than twice the efficiency of devices fabricated with fresh Si NCs (without passivation), and the highest efficiency for Si NC-based HSCs reported to date. However, excessive oxidation should be avoided because it introduces an oxygen rich layer on the particle surface, which blocks carrier transport and deteriorates electrical properties inversely.
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