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Bottom-contact Small-molecule N-type Organic Field Effect Transistors Achieved Via Simultaneous Modification Of Electrode And Dielectric Surfaces
Nathan Cernetic, Orb Acton, T. Weidner, Daniel O. Hutchins, J. Baio, H. Ma, A. Jen
Published 2012 · Materials Science
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Abstract Low-voltage, n-type organic field effect transistors (OFETs) with simultaneously modified bottom-contact (BC) electrodes and dielectric were compared to their top-contact (TC) counterparts. The devices modified with 6-phenoxyhexylphosphonic acid (Ph6PA) self-assembled monolayer (SAM) showed similar performance, morphology, and contact resistance. Electron mobility of C60 devices were 0.212 and 0.320 cm2 V−1 s−1 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) devices were 0.04 and 0.06 cm2 V−1 s−1 for TC and BC devices, respectively. Low contact resistance between 11 and 45 kΩ cm was found regardless of device architecture or n-type semiconductor used. This work shows it is possible to fabricate solution processable low-voltage bottom-contact devices with performance that is similar or better than their top-contact counterparts without the addition of complex and time-consuming processing steps.
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