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Proton Exchange Reactions In SiOx-based Resistive Switching Memory: Review And Insights From Impedance Spectroscopy

Yao-Feng Chang, B. Fowler, Y. Chen, J. Lee
Published 2016 · Chemistry

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Abstract In this work, the AC admittance and conductance of non-polar SiOx-based resistive switching memory devices is measured as a function of temperature to investigate charge transport and potential switching mechanisms. After electroforming using a forward/backward voltage scan, devices were measured over the frequency range of 1 k–1 MHz and the temperature range of 200–400 K. For temperature (T) > 300 K, AC conductance follows σ(ω) = Aωs, where s is linearly dependent on temperature and close to, but less than, unity. For T
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