Online citations, reference lists, and bibliographies.
← Back to Search

Effect Of High Current Density On The Admittance Response Of Interface States In Ultrathin MIS Tunnel Junctions

C. Godet, A. Fadjie-Djomkam, S. Ababou-Girard
Published 2013 · Chemistry

Cite This
Download PDF
Analyze on Scholarcy
Share
The effect of a high current density on the measured admittance of ultrathin Metal-Insulator-Semiconductor (MIS) tunnel junctions is investigated to obtain a reliable energy distribution of the density, D-S(E), of defects localized at the semiconductor interface. The behavior of admittance Y(V, T, omega) and current density J(V, T) characteristics is illustrated by rectifying Hg//C12H25-Si junctions incorporating n-alkyl molecular layers (1.45 nm thick) covalently bonded to n-type Si(111). Modeling the forward bias admittance of a nonequilibrium tunnel junction reveals several regimes which can be observed either in C(omega approximate to 0) vs. (J) plots of the low frequency capacitance over six decades in current or in M ''(omega) plots of the electrical modulus over eight decades in frequency. At low current density, the response of interface states above mid-gap is unaffected and a good agreement is found between the interface states densities derived from the modeling of device response time tau(R)(V) and from the low-high frequency capacitance method valid for thick MIS devices; the low defect density near mid-gap (D-S 1 mA cm(-2)), the admittance depends strongly on both the density of localized states and the dc current density, so that the excess capacitance method overestimates D-S. For very high current densities > 10 mA cm(-2)), the observation of a linear C(omega approximate to 0) vs. (J) dependence could indicate some Fermi level pinning in a high interface density of states located near the Si conduction band. The temperature-independent excess capacitance C(omega approximate to 0) - C(1 MHz) observed at very small J, not predicted by the admittance model, is attributed to some dipolar relaxation in the molecular junction.
This paper references
10.1063/1.1324692
Admittance of metal–insulator–semiconductor tunnel contacts in the presence of donor–acceptor mixed interface states and interface reaction
P. Chattopadhyay (2001)
10.1016/S0927-796X(01)00037-7
Recent advances in Schottky barrier concepts
R. Tung (2001)
10.1021/ja1090436
Odd-even effects in charge transport across self-assembled monolayers.
M. Thuo (2011)
New concepts for nanophotonics and nano-electronics Metamaterials for optical and radio communications
Boubacar Kant'e (2008)
10.1063/1.3076115
Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si
Rotem Har-lavan (2009)
10.1021/JP3018106
Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon
N. Clément (2012)
10.1016/J.ACA.2005.10.027
Self assembled monolayers on silicon for molecular electronics.
D. Aswal (2006)
10.1016/J.CRHY.2007.10.014
Molecular-scale electronics
D. Vuillaume (2008)
10.1063/1.331384
Interfacial layer‐thermionic‐diffusion theory for the Schottky barrier diode
Ching‐Yuan Wu (1982)
10.1088/0022-3727/4/10/319
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
H. Card (1971)
10.1002/ADMA.200601140
Molecular Transport Junctions: Clearing Mists
S. Lindsay (2007)
10.1016/S0022-3093(00)00364-1
Non-equilibrium gate tunneling current in ultra-thin (<2 nm) oxide MOS devices
J. Suñé (2001)
10.1063/1.1351530
Properties of electronic traps at silicon/1-octadecene interfaces
S. Kar (2001)
10.1016/0039-6028(71)90092-6
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné (1971)
10.1063/1.329771
Bulk and surface states analysis in a‐Si:H by Schottky and MIS tunnel diodes capacitance and conductance measurements
P. Viktorovitch (1981)
10.1021/nn301850g
Conductance statistics from a large array of sub-10 nm molecular junctions.
K. Smaali (2012)
10.1016/0038-1101(72)90056-1
Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
S. Kar (1972)
Semiconductor Devices: Physics and Technology
S. Sze (1985)
10.1063/1.3493650
Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions
C. Godet (2010)
10.1063/1.347243
Barrier inhomogeneities at Schottky contacts
J. Werner (1991)
10.1103/PHYSREVLETT.57.1080
Interface-state measurements at Schottky contacts: A new admittance technique.
Werner (1986)
10.1063/1.349737
Electron transport of inhomogeneous Schottky barriers: A numerical study
J. P. Sullivan (1991)
10.1063/1.1655322
Determination of minority carrier lifetime using MIS tunnel diodes
S. Kar (1974)
10.1080/002072197135148
MIS tunnel admittance with an inhomogeneous dielectric
Z. Ouennoughi (1997)
10.1016/B978-0-44-453153-7.00033-X
Electronics with Molecules
A. Ghosh (2011)
10.1063/1.4767121
Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects
A. Fadjie-Djomkam (2012)
10.1063/1.1312203
Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination
William J. Royea (2000)
10.1063/1.3651401
Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator
A. Fadjie-Djomkam (2011)
10.1016/0038-1101(93)90272-R
Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
P. Chattopadhyay (1993)
10.1063/1.328115
Interfacial layer theory of the Schottky barrier diodes
Ching‐Yuan Wu (1980)
10.1016/0038-1101(87)90166-3
A simple interfacial-layer model for the nonideal I-V and C-V characteristics of the Schottky-barrier diode
Hsun-Hua Tseng (1987)
10.1002/adma.200901834
Molecules on si: electronics with chemistry.
A. Vilan (2010)
10.1021/JA00079A071
Alkyl monolayers covalently bonded to silicon surfaces
M. R. Linford (1993)
Mos (Metal Oxide Semiconductor) Physics and Technology
E. H. Nicollian (1982)
10.1021/JP070651I
Electrical Properties of Junctions between Hg and Si(111) Surfaces Functionalized with Short-Chain Alkyls
S. Maldonado (2007)
10.1103/physrevlett.95.266807
How do electronic carriers cross Si-bound alkyl monolayers?
A. Salomon (2005)
10.1063/1.1540732
Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces
A. Lehner (2003)
10.1007/978-1-4613-0795-2_14
Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes
J. Werner (1989)
10.1063/1.364305
Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor
G. Gomila (1997)
10.1103/PhysRevB.82.035404
Relaxation dynamics in covalently bonded organic monolayers on silicon
N. Clément (2010)
10.1103/PHYSREVB.82.125436
Molecular relaxation dynamics in organic monolayer junctions
S. Pleutin (2010)
10.1088/0022-3727/32/1/011
Effects of interface states on the non-stationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes
G. Gomila (1999)
10.1016/J.APSUSC.2005.09.029
Study of silicon–organic interfaces by admittance spectroscopy
S. Kar (2006)
10.1002/CPHC.200500120
Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators.
E. Faber (2005)
10.1021/JP034791D
Molecular Passivation of Mercury−Silicon (p-type) Diode Junctions: Alkylation, Oxidation, and Alkylsilation
Yong-jun Liu (2003)
10.1021/nn800543j
Dynamics within alkylsiloxane self-assembled monolayers studied by sensitive dielectric spectroscopy.
M. C. Scott (2008)
10.1002/ADMA.200601729
What is the Barrier for Tunneling Through Alkyl Monolayers? Results from n‐ and p‐Si–Alkyl/Hg Junctions
A. Salomon (2007)
10.1021/JP060259P
Molecular relaxation dynamics of self-assembled monolayers.
Qing Zhang (2006)



This paper is referenced by
Semantic Scholar Logo Some data provided by SemanticScholar