← Back to Search
Synthesis And Characterization Of Nearly Monodisperse CdE (E = Sulfur, Selenium, Tellurium) Semiconductor Nanocrystallites
Published 1993 · Chemistry
Reduce the time it takes to create your bibliography by a factor of 10 by using the world’s favourite reference manager
Time to take this seriously.
A simple route to the production of high-quality CdE (E=S, Se, Te) semiconductor nanocrystallites is presented. Crystallites from ∼12 A to ∼115 A in diameter with consistent crystal structure, surface derivatization, and a high degree of monodispersity are prepared in a single reaction. The synthesis is based on the pyrolysis of organometallic reagents by injection into a hot coordinating solvent. This provides temporally discrete nucleation and permits controlled growth of macroscopic quantities of nanocrystallites. Size selective precipitation of crystallites from Portions of the growth solution isolates samples with narrow size distributions (<5% rms in diameter). High sample quality results in sharp absorption features and strong «band-edge» emission which is tunable with particle size and choice of material