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Naphthalenetetracarboxylic Diimide-Based N-Channel Transistor Semiconductors: Structural Variation And Thiol-Enhanced Gold Contacts

H. Katz, J. Johnson, and Andrew J. Lovinger, W. Li
Published 2000 · Chemistry

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The synthesis and field-effect transistor (FET) electron mobility of ten N-substituted naphthalene 1,4,5,8-tetracarboxylic diimide (NTCDI) derivatives deposited at ambient and elevated temperatures are reported. Mobilities >0.01 cm2/(V s) were measured in air for three NTCDIs with partially fluorinated substituents, and >0.001 cm2/(V s) for a hydroxy-terminated compound. Mobilities 0.001−0.1 cm2/(V s) were also found for three n-alkyl NTCDIs, but only under vacuum; FET operation with gold bottom contacts was enabled by specific thiol coatings of the contacts. The highest mobility in air, >0.1 cm2/(V s), was conferred by 4-trifluoromethylbenzyl substitution, while 1H,1H-perfluorooctyl substitution resulted in an on/off ratio in air >105. Solution electrochemistry and solid-state X-ray and electron diffraction were employed to partially explain the results, and applications of the materials to complementary circuits are considered.



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