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Temperature Dependence Of Three-Terminal Molecular Junctions With Sulfur End-Functionalized Tercyclohexylidenes
M. Poot, E. A. Osorio, K. O'Neill, J. M. Thijssen, D. Vanmaekelbergh, C. A. V. Walree, Leonardus W. Jenneskens, H. S. J. Zant
Published 2006 · Materials Science
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We have studied the gate and temperature dependence of molecular junctions containing sulfur end-functionalized tercyclohexylidenes. At low temperatures we find temperature-independent transport; at temperatures above 150 K the current increases exponentially with increasing temperature. Over the entire temperature range (10 -300 K), and for different gate voltages, a simple toy model of transport through a single level describes the experimental results. In the model, the temperature dependence arises from the Fermi distribution in the leads and in a three-parameter fit we extract the level position and the tunnel rates at the left and right contact. We find that these parameters increase as the bias voltage increases.
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