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Highly Transparent Nonvolatile Resistive Memory Devices From Silicon Oxide And Graphene.

J. Yao, J. Lin, Yan-Hua Dai, Gedeng Ruan, Z. Yan, Lipei Li, L. Zhong, D. Natelson, J. Tour
Published 2012 · Materials Science, Medicine

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Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiO(x) maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.
This paper references
10.1021/ja108277r
Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.
J. Yao (2011)
10.1002/adma.201004444
Ultra-transparent, flexible single-walled carbon nanotube non-volatile memory device with an oxygen-decorated graphene electrode.
W. Yu (2011)
10.1143/JJAP.50.06GF01
Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications
Jungmoo Lee (2011)
10.1126/SCIENCE.1083212
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
K. Nomura (2003)
Invisible circuits
G. Thomas (1997)
10.1038/srep00242
In situ imaging of the conducting filament in a silicon oxide resistive switch
J. Yao (2012)
10.1007/S00339-011-6267-6
Intrinsic resistive switching and memory effects in silicon oxide
J. Yao (2011)
10.1038/NMAT1849
The rise of graphene.
Andre K. Geim (2007)
10.1038/nnano.2007.151
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.
S. Ju (2007)
10.1126/science.1171245
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
X. Li (2009)
10.1021/nl101902k
Graphene oxide thin films for flexible nonvolatile memory applications.
H. Jeong (2010)
10.1063/1.3106629
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
A. Suresh (2009)
10.1016/S1369-7021(08)70119-6
Resistive switching in transition metal oxides
A. Sawa (2008)
10.1126/SCIENCE.1085276
Transparent Electronics
J. Wager (2003)
10.1038/nnano.2010.132
Roll-to-roll production of 30-inch graphene films for transparent electrodes.
S. Bae (2010)
10.1063/1.3276556
Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex
Gang Liu (2009)
10.1021/nn202625c
Growth of graphene from food, insects, and waste.
Gedeng Ruan (2011)
In situ imaging of the conducting filament in a silicon oxide switch
J. Yao (2012)
10.1016/S1369-7021(03)00531-5
Moore’s law at the extremes
G. Marsh (2003)
10.1109/LED.2011.2126017
An Indium-Free Transparent Resistive Switching Random Access Memory
K. Zheng (2011)
10.1038/nature09579
Growth of graphene from solid carbon sources
Z. Sun (2010)
10.1038/nature09804
Growth of graphene from solid carbon sources
Z. Sun (2011)
10.1557/MRS2004.236
Overview of phase-change chalcogenide nonvolatile memory technology
S. Hudgens (2004)
10.1038/39999
Materials science: Invisible circuits
G. Thomas (1997)
10.1038/NMAT2023
Nanoionics-based resistive switching memories.
R. Waser (2007)
10.1109/LED.2011.2158056
Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
H. Kim (2011)
10.1063/1.3041643
Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
J. Seo (2008)
10.1126/science.1156965
Fine Structure Constant Defines Visual Transparency of Graphene
R. R. Nair (2008)
10.1038/nature07719
Large-scale pattern growth of graphene films for stretchable transparent electrodes
K. Kim (2009)
10.1002/ADFM.200902095
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
S. Yoon (2010)
10.1021/NL050254O
Transparent and flexible carbon nanotube transistors.
E. Artukovic (2005)
10.1021/nl102255r
Resistive switches and memories from silicon oxide.
J. Yao (2010)
10.1063/1.2903707
Low current resistive switching in Cu–SiO2 cells
C. Schindler (2008)
10.1002/smll.200901100
Resistive switching in nanogap systems on SiO2 substrates.
J. Yao (2009)
10.1038/nature03090
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K. Nomura (2004)



This paper is referenced by
10.1016/J.PROGSOLIDSTCHEM.2016.07.001
Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy
Yao-Feng Chang (2016)
Chapter 2 Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices
Konstantina Saranti (2019)
Structural Properties and Mechanical Characterizations of Graphene Based Cobaltferrites Nanocomposites for Load Baring Applications
Muhammad Siyar (2015)
10.7567/JJAP.53.125001
Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots
P. Ooi (2014)
10.1002/adma.201801187
Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?
Adnan Mehonic (2018)
10.1063/1.5021099
A graphene integrated highly transparent resistive switching memory device
S. Dugu (2018)
10.1109/ACCESS.2020.2994383
Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing
P. S. Kalaga (2020)
10.1021/nl5005916
Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.
H. Tian (2014)
10.1063/1.4817970
Low voltage resistive switching devices based on chemically produced silicon oxide
Can Li (2013)
10.1021/acsami.7b15269
Bioinspired Tribotronic Resistive Switching Memory for Self-Powered Memorizing Mechanical Stimuli.
Y. Sun (2017)
10.1002/ADFM.201801690
Novel Electronics for Flexible and Neuromorphic Computing
H. E. Lee (2018)
Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices
Fei Hui (2018)
10.1002/AELM.201500370
Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
Kai Qian (2016)
10.1002/aelm.201800136
Silicon Oxide Electron‐Emitting Nanodiodes
Gongtao Wu (2018)
10.1109/TED.2014.2312611
Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application
H. Zhao (2014)
10.1038/ncomms5720
An upconverted photonic nonvolatile memory.
Ye Zhou (2014)
10.1016/J.APMT.2018.11.007
Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions
Pingping Zheng (2019)
10.1016/B978-0-12-821381-0.00017-X
Application of carbon nanomaterials in the electronic industry
J. Sengupta (2020)
10.1109/LED.2015.2479235
Photo-Stable Transparent Nonvolatile Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers
S. Kim (2015)
10.1038/s41467-018-06644-w
A hardware Markov chain algorithm realized in a single device for machine learning
H. Tian (2018)
10.1002/adma.201400270
Oxide resistive memory with functionalized graphene as built-in selector element.
Yuchao Yang (2014)
10.1016/J.EJPE.2017.10.006
Oxidative desulfurization using graphene and its composites for fuel containing thiophene and its derivatives: An update review
M. A. Betiha (2017)
10.1002/AELM.201700135
Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide
Rui Shi (2017)
10.1088/1674-1056/25/6/067303
Modulation of physical properties of oxide thin films by multiple fields
H. Yang (2016)
10.1063/1.4975157
Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
W. R. Acevedo (2017)
10.1109/TED.2019.2959883
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
Dayanand Kumar (2020)
10.1002/adma.201302047
High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.
G. Wang (2013)
10.1063/1.4931491
Nanoscale phase change memory with graphene ribbon electrodes
Ashkan Behnam (2015)
10.1039/c6nr08687j
Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.
Jie Shang (2017)
10.1364/OE.24.017711
Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.
K. Kim (2016)
10.7567/APEX.7.034101
Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
C. Ye (2014)
10.1016/J.JPCS.2018.04.011
Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films
Beom Soo Joo (2018)
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