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Formation Of A High Quality Two-dimensional Electron Gas On Cleaved GaAs

L. Pfeiffer, K. West, H. Stormer, J. Eisenstein, K. Baldwin, D. Gershoni, J. Spector
Published 1990 · Physics

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We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface.
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This paper is referenced by
Spin dynamics and spatially resolved spin transport phenomena in GaAs based structures
R. Voelkl (2014)
Near‐field Optical Spectroscopy of Single GaAs Quantum Wires
A. Richter (1997)
Spectroscopy of one-dimensional excitons in gaas quantum wires
H. Akiyama (1997)
Self-assembly of InAs Quantum Dot Structures on Cleaved Facets
E. Uccelli (2008)
A close look on single quantum dots
A. Zrenner (2000)
Probing the electrostatics of integer quantum hall edges with momentum-resolved tunnel spectroscopy
Manfred Huber (2004)
Low energy dynamics of two-dimensional lateral tunnel junctions
P. Jiang (2006)
Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy
S. Koshiba (1995)
Far- and near-field optical spectroscopy of cleaved edge quantum wires
M. Katz (1997)
Fixed‐Node Monte Carlo Studies of Excitons in Confined Geometries
S. He (1997)
Optical properties of the (311) oriented GaAs/AlAs superlattices and quantum wire-like structures
A. Milekhin (1998)
(1 1 0) oriented quantum wells and modulation-doped heterostructures for cleaved edge overgrowth
W. Wegscheider (1998)
Experiments on the Fermi to Tomonaga–Luttinger Liquid Transition in Quasi-1D Systems
M. Hilke (2003)
Scanning near–field photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots
M. Hadjipanayi (2004)
Quantum wires, quantum boxes and related structures : physics, device potentials and structural requirements
H. Sakaki (1992)
The nature of island formation in the homoepitaxial growth of GaAs(110)
D. M. Holmes (1995)
Quantum Wires and Dots Fabricated by Cleaved Edge Overgrowth
W. Wegscheider (1997)
A new self-limited growth for the fabrication of atomically uniform quantum wires and quantum dots
X. Wang (1998)
Polarization anisotropy in quasiplanar sidewall quantum wires on patterned GaAs (311)A substrates
P. Santos (1999)
Electron dispersion relations with negative effective masses in quantum wells grown on the cleaved edge of a superlattice
Z. Gribnikov (2002)
Electronic structure and efficient carrier injection in low-threshold T-shaped quantum-wire lasers with parallel p- and n-doping layers
S. Liu (2007)
Dynamics of Electronic Transport in Spatially-extended Systems with Negative Differential Conductivity
H. Xu (2010)
On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics
T. Erdem (2011)
Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs
J. Burroughes (1993)
Improved optical qualities of tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy
N. Tomita (1997)
[110] interface roughness and local electronic states in GaAs T-shaped quantum wires and wells
M. Yoshita (2000)
Quantum wells with atomically smooth interfaces
M. Yoshita (2002)
Modeling of purely strain-induced CEO GaAs/In/sub 0.16/Al/sub 0.84/As quantum wires
S. Birner (2005)
Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers
M. Yoshita (2007)
Optoelectronic Properties and Applications of Quantum Dots
J. M. Hvam (2019)
Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K
Makoto Okano (2008)
Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates
M. Tanaka (1995)
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