Online citations, reference lists, and bibliographies.
← Back to Search

Competing Spin-dependent Conductance Channels In Underoxidized Tunnel Junctions

J. Ventura, J. Araújo, J. Sousa, R. Ferreira, P. Freitas
Published 2007 · Physics

Cite This
Download PDF
Analyze on Scholarcy
Share
The authors study the transport properties of magnetic tunnel junctions (MTJs) with underoxidized 9A AlOx barriers suitable for magnetoresistive sensors in high-density storage devices. Temperature dependent measurements revealed different dominant transport mechanisms in different junctions: tunnel, metallic, or both, depending on the MTJ-magnetic state. This denotes a competition between two conductance channels (tunnel through oxidized AlOx and metallic through unoxidized Al nanoconstrictions), so that the dominance of one over the other is the outcome of small structural and composition variations in the barrier. Furthermore, transport through the Al nanobridges is spin dependent, caused by ballistic and/or diffusive magnetoresistance through nonmagnetic metallic paths.
This paper references
10.1103/PHYSREVB.70.094404
Magnetoresistance and resistance of magnetic nanoconstriction
Zhaoyang Yang (2004)
10.1063/1.1290271
Conducting ballistic magnetoresistance and tunneling magnetoresistance: Pinholes and tunnel barriers
N. García (2000)
10.1063/1.1925318
Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9 nm Al barriers
R. Ferreira (2005)
10.1103/PHYSREVB.66.020403
Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature
H. D. Chopra (2002)
10.1063/1.1590064
Tunneling criteria and breakdown for low resistive magnetic tunnel junctions
B. Oliver (2003)
10.1103/PhysRevB.63.104428
Ballistic versus diffusive magnetoresistance of a magnetic point contact
L. Tagirov (2001)
10.1103/PHYSREVB.70.172406
Absence of ballistic magnetoresistance in Ni contacts controlled by an electrochemical feedback system
J. Mallett (2004)
10.1103/PHYSREVLETT.89.287203
Universal scaling of ballistic magnetoresistance in magnetic nanocontacts.
S. Chung (2002)
10.1109/TMAG.2002.802804
The applicability of CPP-GMR heads for magnetic recording
M. Takagishi (2002)
10.1063/1.2009837
Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films
Hideaki Fukuzawa (2005)
10.1016/0375-9601(75)90174-7
Tunneling between ferromagnetic films
M. Julliere (1975)
10.1103/PHYSREVLETT.83.2030
DOMAIN WALL SCATTERING EXPLAINS 300% BALLISTIC MAGNETOCONDUCTANCE OF NANOCONTACTS
G. Tatara (1999)
10.1103/PHYSREVB.65.214407
Crossover from diffusive to ballistic transport properties in magnetic multilayers
Y. Qi (2002)
10.1103/PhysRevB.71.024412
Ballistic magnetoresistance in nickel single-atom conductors without magnetostriction
M. Sullivan (2005)
10.1109/TMAG.2006.879734
Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area
J. Ventura (2006)
10.1063/1.1430861
Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions
E. Price (2002)
10.1103/PhysRevLett.96.026601
Inversion of magnetoresistance in magnetic tunnel junctions: effect of pinhole nanocontacts.
S. Mukhopadhyay (2006)
10.1109/TMAG.2005.861788
Commercial TMR heads for hard disk drives: characterization and extendibility at 300 gbit/in/sup 2/
Sining Mao (2006)



This paper is referenced by
10.1016/J.JNONCRYSOL.2008.05.077
Structural, magnetic and transport properties of ion beam deposited Co thin films
R. Fermento (2008)
Characterization of an AlO$_{\rm x}$ Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique
Ki Woong Kim (2009)
10.1038/s41598-017-07762-z
High power and low critical current density spin transfer torque nano-oscillators using MgO barriers with intermediate thickness
J. D. Costa (2017)
10.1063/1.3236512
The effect of pinhole formation/growth on the tunnel magnetoresistance of MgO-based magnetic tunnel junctions
J. Teixeira (2009)
10.1109/TMAG.2007.893699
Transport Properties of Low Resistance Underoxidized Magnetic Tunnel Junctions
J. Ventura (2007)
10.1063/1.3298365
Probing atomic rearrangement events in resistive switching nanostructures
J. Ventura (2010)
10.1088/0022-3727/42/10/105407
Electroforming, magnetic and resistive switching in MgO-based tunnel junctions
J. Teixeira (2009)
10.1016/J.JNONCRYSOL.2008.04.050
Asymmetric electromigration-driven resistive switching in tunnel junctions
J. Ventura (2008)
10.1088/0953-8984/19/17/176207
Electrical current induced pinhole formation and insulator-metal transition in tunnel junctions.
J. Ventura (2007)
10.1088/0022-3727/40/19/003
Three-state memory combining resistive and magnetic switching using tunnel junctions
J. Ventura (2007)
10.1103/PHYSREVB.78.024403
Pinholes and temperature-dependent transport properties of MgO magnetic tunnel junctions
J. Ventura (2008)
10.1109/TMAG.2008.2006570
Characterization of an AlO $_{\rm x}$ Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique
K. Kim (2009)
10.1063/1.2837622
Pinholes in thin low resistance MgO-based magnetic tunnel junctions probed by temperature dependent transport measurements
J. Ventura (2008)
10.1016/J.JMMM.2009.04.072
Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions
J. Feng (2010)
Semantic Scholar Logo Some data provided by SemanticScholar