Online citations, reference lists, and bibliographies.
← Back to Search

Theory Of Metal‐insulator‐semiconductor Solar Cells

J. Shewchun, R. Singh, M. Green
Published 1977 · Physics

Cite This
Download PDF
Analyze on Scholarcy
Share
Recent reports in the literature indicate that the introduction of an interfacial oxide layer in a Schottky barrier can greatly increase the photovoltaic conversion efficiency of such devices. We propose an explanation for the operation of such solar cells based on the concept that they are minority‐carrier nonequilibrium MIS tunnel diodes. Calculations of efficiency as a function of insulator thickness, substrate carrier concentration, surfaces states, and oxide charge are presented. These indicate that a maximum theoretical efficiency of 21% is possible under AM2 illumination for high substrate doping and low interface defect density.
This paper references
10.1016/0038-1101(71)90165-1
Non-equilibrium effects on metal-oxide-semiconductor tunnel currents☆
R. A. Clarke (1971)
10.1063/1.1663157
Equilibrium‐to‐nonequilibrium transition in MOS (surface oxide) tunnel diode
V. Temple (1974)
10.1109/JQE.1979.1069942
The physics of semiconductor devices
H. Grubin (1979)
10.1063/1.1655138
Schottky‐barrier solar‐cell calculations
D. L. Pulfrey (1974)
10.1063/1.321694
The role of the interfacial layer in metal−semiconductor solar cells
S. J. Fonash (1975)
10.1016/0038-1101(74)90172-5
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory☆
M. Green (1974)
10.1088/0022-3727/9/1/012
Properties of silicon-metal contacts versus metal work-function, silicon impurity concentration and bias voltage
B. Pellegrini (1976)
10.1109/JRPROC.1960.287647
Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation
M. Wolf (1960)
10.1063/1.88375
A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell
R. J. Stirn (1975)
10.1002/J.1538-7305.1967.TB01727.X
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian (1967)
10.1016/0038-1101(74)90127-0
Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes☆
M. Green (1974)
10.1063/1.88654
Effects of interfacial oxide layers on the performance of silicon Schottky‐barrier solar cells
D. R. Lillington (1976)
10.1016/0013-7480(71)90074-X
A new look at silicon solar cell performance
M. Wolf (1971)
10.1109/PROC.1975.9727
I-V characteristics for Silicon Schottky solar cells
W. Anderson (1975)
10.1149/1.2134259
Characteristics of Si ‐ SiO2 Interfaces Beneath Thin Silicon Films Defined by Electrochemical Etching
T. Kamins (1975)
10.1063/1.322149
An Al p‐silicon MOS photovoltaic cell
E. Charlson (1975)
10.1063/1.88837
Photovoltaic effect in MIS diodes or Schottky diodes with an interfacial layer
R. Singh (1976)
Silicon semiconductor data
H. F. Wolf (1969)
10.1149/1.2426565
Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon
B. Deal (1967)
10.1116/1.568471
Outlook for Si photovoltaic devices for terrestrial solar‐energy utilization
M. Wolf (1975)
10.1524/zpch.1956.8.5_6.394
Handbook of chemistry and physics
R. C. Weast (1973)
10.1063/1.88588
Improved efficiency of MIS‐silicon solar cells by HF treatment of the oxide layer
A. Kipperman (1976)



This paper is referenced by
10.1063/1.325260
SnO2/Si solar cells—heterostructure or Schottky‐barrier or MIS‐type device
A. Ghosh (1978)
10.1109/JPHOTOV.2015.2496861
Ion-Implanted Screen-Printed n-Type Solar Cell With Tunnel Oxide Passivated Back Contact
A. Upadhyaya (2016)
10.1063/1.325437
A possible explanation for the photovoltaic effect in indium tin oxide on InP solar cells
R. Singh (1978)
10.1039/C7TA01959A
V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
G. Masmitjà (2017)
10.1149/1.3060124
Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature ( < 400 ° C ) Anodization Technique
Chih-Yao Wang (2009)
10.1063/1.3149703
Aluminum/polyaniline/GaAs metal-insulator-semiconductor solar cell: Effect of tunneling on device performance
S. Mangal (2009)
10.1088/1361-6463/ab9861
The hole transport mechanism of MoOx/a-Si: H(i)/n-Si heterojunction photovoltaic devices: the source of the ‘S-shaped’ behavior
M. Gao (2020)
10.1016/J.SOLMAT.2006.06.026
Carrier transport in high-efficiency ZnO/SiO2/Si solar cells
W. W. Wenas (2006)
10.1016/B978-1-4832-8407-1.50128-8
PHOTOVOLTAIC EFFECT IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
F. G. Wakim (1978)
10.1063/1.324616
The operation of the semiconductor‐insulator‐semiconductor (SIS) solar cell: Theory
J. Shewchun (1978)
10.1063/1.329461
On the surface recombination current of metal‐insulator semiconductor inversion layer solar cells
O. M. Nielsen (1981)
10.1049/IP-I-1.1980.0059
Current mechanism of tunnel MIS solar cells
O. M. Nielsen (1980)
10.1557/JMR.2016.453
Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells
L. G. Gerling (2017)
10.1016/0038-1098(82)90857-2
Surface electronic structure of SnO2(110)
S. Munnix (1982)
10.1016/J.SOLENER.2017.01.061
Application of a-Si/μc-Si hybrid layer in tunnel oxide passivated contact n-type silicon solar cells
K. Tao (2017)
10.1002/ADMI.201800231
Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions
N. Maman (2018)
Modeling Transport Across Thin 5
Dielectric Barriers (1998)
10.4028/www.scientific.net/SSP.312.98
The Features of the Lateral Photovoltaic Effect in the Fe3O4/SiO2/n-Si Structure Depending on Silicon Substrate Orientation
T. Pisarenko (2020)
10.1109/PVSC.2010.5614304
Characteristics of MIS solar cells using sputtering SiO2 insulating layers
Tzu-Yueh Chang (2010)
10.1016/B978-1-4832-8437-8.50082-X
MOS SOLAR CELLS
H. M. Kizilyalli (1980)
10.1063/1.325651
The interfacial layer in MIS amorphous silicon solar cells
J. McGill (1979)
10.1016/0013-4686(88)85024-2
An impedance study of the silicon—solution interface under illumination
K. Chandrasekaran (1988)
10.1016/0379-6787(81)90088-0
Review of conductor-insulator-semiconductor (CIS) solar cells
R. Singh (1981)
10.1002/PSSR.201510186
Optimized emitter contacting on multicrystalline silicon thin film solar cells
A. Gawlik (2015)
10.1016/J.SOLMAT.2018.05.041
Electron-selective quinhydrone passivated back contact for high-efficiency silicon/organic heterojunction solar cells
Zou Ziyu (2018)
10.1002/PSSB.201800342
Absence of Evidence for Fixed Charge in Metal–Aluminum Oxide–Silicon Tunnel Diodes
Roderick J. Marstell (2019)
10.1063/1.4913869
PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells
M. Junghanns (2015)
10.1364/OE.16.003798
The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
S. Xiao (2008)
10.1002/PSSA.2210710242
The effect of interface states on the performance of MIS solar cells
K. Sen (1982)
10.1002/PSSA.2210590210
Effects of thin oxide layers on the characteristics of GaAs MIS solar cells
R. L. Meirhaeghe (1980)
10.1007/BF01770906
Temperature effects in Mis solar cells on single crystal p-silicon
J. Arora (1987)
10.1016/0038-1101(86)90213-3
On the minority-carrier quasi-Fermi level in metal-oxide-semiconductor tunnel structures
Cheng-Nan Chang (1986)
See more
Semantic Scholar Logo Some data provided by SemanticScholar