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Electronic Structure Of The Si(111)2 X 1 Surface By Scanning-tunneling Microscopy.
Stroscio, Feenstra, Fein
Published 1986 · Materials Science, Medicine, Physics
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Email Mesure des variations du courant tunnel en fonction de la tension, de la position laterale et de la distance pointe W-surface; determination de la densite d'etats a partir de la conductivite differentielle. Determination du module du vecteur d'onde parallele pour certains etats; observation d'une inversion de phase en [011], correspondant aux parites opposees des etats des deux cotes de la bande interdite
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