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Large Magnetoresistance At Room Temperature In Ferromagnetic Thin Film Tunnel Junctions.

Moodera, Kinder, Wong, Meservey
Published 1995 · Physics, Medicine

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b, R/R, is 11.8%, 20%, and 24%, respectively. The value at 4.2 K is consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films. b, R/R changes little with a small voltage bias, whereas it decreases significantly at higher bias ()0.1 V), in qualitative agreement with Slonczewski's model. These junctions have potential use as low-power field sensors and memory elements.



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