Online citations, reference lists, and bibliographies.
Please confirm you are human
(Sign Up for free to never see this)
← Back to Search

Noise Spectroscopy Of Traps In Silicon Nanowire Field-effect Transistors

S. Pud, J. Li, M. Petrychuk, S. Feste, A. Offenhausser, S. Mantl, S. Vitusevich
Published 2011 · Materials Science

Save to my Library
Download PDF
Analyze on Scholarcy
We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.
This paper references

This paper is referenced by
Semantic Scholar Logo Some data provided by SemanticScholar