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Base Doping Profile Effect In SiGe Heterojunction Bipolar Transistors
Published 2004 · Materials Science
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The current gain and cut-off frequency performance in NPN Si/SiGe/Si double-heterojunction bipolar transistors (SiGe DHBTs) with two different base doping profiles (N/sub B/) has been analyzed. The simulation results for conventional uniform-N/sub B/ SiGe DHBT are compared with the proposed SiGe drift-DHBT (DrDHBT) having N/sub B/-ramp, while base Gummel number is kept constant in both the devices. The N/sub B/ ramp is controlled such that it minimizes the decelerating field component and a net accelerating field in quasi-neutral base of DrDHBT for minority electrons could be achieved. This increases the drift component of electron current in the quasi-neutral base, which gives rise to an increased current gain and improved cut-off frequency in DrDHBT depending on the value of drift-field parameter. Therefore, an optimized base doping profile could be implemented in place of uniform base doping for further improvement over uniform-N/sub B/ SiGe DHBTs.