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An Analytic Model For The MIS Tunnel Junction

N. G. Tarr, D.L. Pulfrey, D.S. Camporese
Published 1983 · Physics

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A comprehensive analytic model describing current flow in the MIS tunnel junction under steady-state conditions is developed. The tunnel junction is viewed as imposing boundary conditions on the usual set of differential equations governing the electrostatic potential and carrier distributions within the semiconductor. These equations are then solved using the approximation techniques applied in conventional p-n junction theory. Full Fermi-Dirac statistics are used where necessary in the model, and surface states are treated using a Shockley-Read-Hall approach. In computing the band-to-metal tunnel currents, it is assumed that each valley in the conduction band and peak in the valence band can be assigned a single tunneling probability factor describing all transitions between that valley or peak and the metal. On making the above approximations, it is found that the state of the junction is described by two coupled nonlinear algebraic equations, which can be solved by routine iterative techniques. The model is applied to generate current-voltage characteristics for a minority-carrier AI-SiOx- pSi diode, operated both in the dark and as a solar cell, and for a negative barrier AI-SiOx-nSi contact exhibiting photocurrent multiplication. The results obtained are in good agreement with those predicted by more precise numerical methods.
This paper references
10.1016/0038-1101(75)90151-3
Frequency response of the current multiplication process in MIS tunnel diodes
M. Green (1975)
10.1109/T-ED.1979.19685
Relating computer simulation studies with interface state measurements on MIS solar cells
J.K. Kim (1979)
10.1109/T-ED.1980.19927
A comparison of majority- and minority-carrier silicon MIS solar cells
K.K. Ng (1980)
10.1063/1.1663157
Equilibrium‐to‐nonequilibrium transition in MOS (surface oxide) tunnel diode
V. Temple (1974)
10.1103/PHYSREV.123.85
Tunneling from an Independent-Particle Point of View
W. Harrison (1961)
10.1109/T-ED.1979.19400
Application of the superposition principle to solar-cell analysis
F. Lindholm (1979)
10.1098/rspa.1977.0058
Theory of the Schottky barrier solar cell
P. Landsberg (1977)
Zeros of non - linear equations
R. B. Godfrey (1981)
10.1007/978-1-4684-1752-4_9
Some Properties of Exponentially Damped Wave Functions
C. Mead (1969)
10.1063/1.331336
On tunneling in metal‐oxide‐silicon structures
Z. Weinberg (1982)
10.1007/978-1-4684-1752-4_4
Theory of Metal-Barrier-Metal Tunneling
C. Duke (1969)
10.1063/1.323667
Theory of metal‐insulator‐semiconductor solar cells
J. Shewchun (1977)
10.1002/PSSA.2210480118
Correlation between interface states and MIS silicon solar cell performances
P. Viktorovitch (1978)
10.1063/1.89161
MIS solar cell—General theory and new experimental results for silicon
M. Green (1976)
10.1016/0038-1101(77)90002-8
Model calculations for metal-insulator-semiconductor solar cells
L. Olsen (1977)
10.1016/0038-1101(70)90084-5
Theory of tunneling into interface states
L. B. Freeman (1970)
10.1109/T-ED.1982.20825
New experimental evidence for minority-carrier reflection at negative-barrier MIS contacts
N. G. Tarr (1982)
On tunnelling in metaloxidesilicon st ‘ uctures
Z. A. Weinberg
10.1063/1.328140
An induced back surface field solar cell employing a negative barrier metal‐insulator‐semiconductor contact
N. G. Tarr (1980)
10.1016/0038-1101(74)90127-0
Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes☆
M. Green (1974)
10.1063/1.321694
The role of the interfacial layer in metal−semiconductor solar cells
S. J. Fonash (1975)
10.1063/1.324074
Improvement of the photovoltaic efficiency of a metal-insulator-semiconductor structure: Influence of interface states
P. Viktorovitch (1977)
10.1007/978-94-009-9840-7_28
The MIS and MISIM Solar Cell
M. Green (1978)
10.1109/T-ED.1980.19935
The superposition principle for homojunction solar cells
N. G. Tarr (1980)
10.1016/0038-1101(74)90172-5
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory☆
M. Green (1974)



This paper is referenced by
10.1002/PSSA.2211330253
Characteristics of a (Quinacridone/Al2O3/Al) MIS Tunnel Diode
Jun'ichiro Muto (1992)
10.1109/16.877180
Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells
B. Kuhlmann (2000)
10.1088/0268-1242/26/4/045002
Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-k dielectrics for nanoscale double-gate MOSFETs
Ghader Darbandy (2011)
10.1002/adma.200901834
Molecules on si: electronics with chemistry.
A. Vilan (2010)
10.1016/0038-1101(94)00269-L
Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
M. Depas (1995)
10.1088/0268-1242/25/4/045011
Correlation between fixed charge and capacitance peaks in silicon nanocrystal metal-insulator-semiconductor devices
C. Flynn (2010)
10.1007/BF02661223
The effect of Ti:W barrier metal on characteristics of palladium-silicide Schottky barrier diodes
V. F. Drobny (1985)
10.1016/S0038-1101(98)00097-5
Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
W.-K. Shih (1998)
10.1109/TED.2008.922493
Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $\kappa$ Gate Stacks
M. Luisier (2008)
10.9734/PSIJ/2018/44368
Manufacturing and Electrical Characterization of MOS Devices of Ultrathin Silicon Dioxide Layer
A. Saad (2018)
10.1109/ISDRS.2007.4422302
An alternate approach of modeling the direct tunneling (DT) current through multi-gate stacks in high-κ Devices
Zhian Jin (2007)
10.1088/0268-1242/7/12/009
A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes
M. Depas (1992)
10.1109/16.678572
Modeled tunnel currents for high dielectric constant dielectrics
E. Vogel (1998)
10.1016/0925-4005(96)80054-2
Minority-carrier MIS tunnel diode hydrogen sensors
V. Casey (1996)
10.1109/16.141239
Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment
I. Post (1992)
10.1109/16.2439
An analysis of the DC and small-signal AC performance of the tunnel emitter transistor
K. M. Chu (1988)
10.1063/1.337776
Inversion criteria for the metal‐insulator‐semiconductor tunnel structures
S. Wang (1986)
10.1002/ADMI.201800231
Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions
N. Maman (2018)
10.1016/0021-9991(90)90049-7
Numerical simulation of the current-voltage characteristics of MIS tunnel devices
Y. Xia (1990)
Physical Background of MOS Model 11
R. V. Langevelde (2003)
10.1021/JP212043V
Controlling Space Charge of Oxide-Free Si by in Situ Modification of Dipolar Alkyl Monolayers
T. Toledano (2012)
A Theoretical Study and Modeling of Si/SiO 2 Multi Quantum Well MIS-Devices with Solving the Schrodinger-Poisson-Tunneling Current Equations Self-Consistently
A. Rostami (2011)
10.1016/J.PHYSE.2010.04.019
Modelling of metal-insulator-semiconductor devices featuring a silicon quantum well
C. Flynn (2010)
10.1063/1.337166
Equilibrium properties of thin‐oxide metal‐oxide‐semiconductor diodes
M. A. Butler (1986)
10.1016/S0038-1101(03)00220-X
Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs
Jonghwan Lee (2003)
10.1088/1748-0221/7/08/P08013
Innovative carbon nanotube-silicon large area photodetector
A. Ambrosio (2012)
10.1088/0268-1242/4/11/004
A model of polysilicon emitter transistors devoid of a single-crystal emitter region
D. C. Browne (1989)
10.1143/APEX.3.122101
Impact of Carrier Transport on Aquamarine-Green Laser Performance
D. Sizov (2010)
10.1063/1.3694140
Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions
Rotem Har-Lavan (2012)
10.1088/1361-6463/AAD067
Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
Qiyuan Zhang (2018)
10.1063/1.372290
Analytic model of direct tunnel current through ultrathin gate oxides
Khairurrijal (2000)
10.1117/12.871608
Silicon solar cells with polysilicon emitters and back surface fields
Jiang Du (2010)
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