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Non-Volatile Resistance Switching Using Silicon Nanogap Junction

Y. Naitoh, Y. Morita, Masayo Horikawa, H. Suga, T. Shimizu
Published 2008 · Materials Science

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We have investigated the resistance switching effect of a silicon nanogap structure when pulse bias voltages are applied. Silicon nanogap junctions were prepared by applying large-bias voltages across a Si wire and their electrical properties were measured in a vacuum chamber. The measured current–voltage characteristics exhibited a clear negative differential resistance effect and repeated on-off cycles with a large on-off ratio of over 103. The results suggest that resistance switching effects can be generated in a nanogap junction that is composed of a covalently bonded material such as silicon.
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