Online citations, reference lists, and bibliographies.
← Back to Search

Characteristics Of A Multiple-Layered Graphene Oxide Memory Thin Film Transistor With Gold Nanoparticle Embedded As Charging Elements

Yo-Han Kim, Huynh Quoc Nguyen, Bum Jun Park, Hyun Ho Lee, Tae Seok Seo

Save to my Library
Download PDF
Analyze on Scholarcy Visualize in Litmaps
Share
Reduce the time it takes to create your bibliography by a factor of 10 by using the world’s favourite reference manager
Time to take this seriously.
Get Citationsy
In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.