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Chapter 2 Metal-Insulator Transition In Thin Film Vanadium Dioxide

Dmitry Ruzmetov, Shriram Ramanathan
Published 2010 · Materials Science

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Recent advances in thin film growth of transition metal oxides coupled with the discovery of fascinating phenomena such as superconductivity and colos- sal magneto-resistance has caused an enormous interest in correlated electron effects from technological and fundamental science perspectives. Vanadium dioxide.VO2/ is one of the most studied correlated electron systems that exhibits a dramatic metal- insulator transition (MIT) near room temperature. The study of this unique material offers prospects of developing a novel kind of electronics with advanced function- ality and advancing fundamental science of correlated electron effects. A review of the properties of VO2 is given with special attention to the MIT. Growth conditions for synthesis of high quality VO2 are described, the crystal structure of the mate- rial is elucidated, and the relationships between electrical parameters and material morphology are defined. X-ray absorption and photoemission experiments revealed the changes in the energy band structure upon the crossing of the MIT. The analysis of near-Fermi level density of states, the correlation between the band structure and electron transport parameters, and the dispersion of the infrared reflectance of VO2 thin films help understanding the physics behind the MIT. Hall effect experiments provide the data on the carrier density and electron mobility across the MIT - impor- tant parameters in the Mott theory of MIT. VO2 devices and possible applications in electronics are discussed.
This paper references
10.1149/1.2737347
A Theoretical Approach to Investigate Low-Temperature Nanoscale Oxidation of Metals under UV Radiation
C. Chang (2007)
10.1149/1.2135430
Highly oriented VO2 thin films prepared by sol-gel deposition method
Byung-Gyu Chae (2005)
10.1103/PHYSREVB.78.075106
First-principles study of correlation effects in VO2
Rei Sakuma (2008)
10.1143/JJAP.44.L1150
Preparation of VO2 films with metal-insulator transition on sapphire and silicon substrates by inductively coupled plasma-assisted sputtering
K. Okimura (2005)
10.1016/S0921-4534(00)00469-X
Extension of the Brinkman-Rice picture and the Mott transition
H. Kim (2000)
10.1063/1.2431456
Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor
B. Kim (2007)
10.1103/PhysRevB.54.4621
Mid-infrared properties of a VO2 film near the metal-insulator transition.
Choi (1996)
10.1063/1.1518148
Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition
M. Sahana (2002)
10.1103/PhysRevB.7.2109
Hall effect in VO$sub 2$ near the semiconductor-to-metal transition
W. Rosevear (1973)
10.1063/1.2767189
Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide (VO2)
R. Mani (2007)
10.1063/1.2817818
Structure-functional property relationships in rf-sputtered vanadium dioxide thin films
D. Ruzmetov (2007)
10.1116/1.574993
Simple resistance model fit to the oxidation of a vanadium film into VO2
F. C. Case (1988)
10.1016/0038-1098(69)90888-6
Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature
L. A. Ladd (1969)
10.1103/PhysRevB.70.161102
Evidence for a structurally-driven insulator-to-metal transition in VO2 : a view from the ultrafast timescale
A.Cavalleri (2004)
10.1103/PhysRevB.43.7263
Soft-x-ray-absorption studies of the electronic-structure changes through the VO2 phase transition.
Abbate (1991)
10.1103/PhysRevB.41.4993
Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO2, V6O13, and V2O3.
Shin (1990)
10.1103/PhysRevB.79.153107
Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition
D. Ruzmetov (2009)
10.1103/PHYSREVB.71.085109
Coulomb correlations and orbital polarization in the metal-insulator transition of VO2
A. Liebsch (2003)
10.1088/0953-8984/12/41/310
Electrical switching and Mott transition in VO2
G. Stefanovich (2000)
10.1016/0921-4526(94)90938-5
Angular dependent soft x-ray absorption spectroscopy of vanadium oxides
E. Goering (1994)
10.1016/S1293-2558(00)80096-5
Ab initio structures of (M2) and (M3) VO2 high pressure phases
J. Galy (1999)
10.1063/1.1656559
Transport Properties of Sputtered Vanadium Dioxide Thin Films
D. Hensler (1968)
10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO;2-K
The metal‐insulator transitions of VO2: A band theoretical approach
V. Eyert (2002)
10.1126/science.1150124
Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging
M. M. Qazilbash (2007)
10.1103/PhysRevB.74.205118
Correlated metallic state of vanadium dioxide
M. M. Qazilbash (2006)
10.1063/1.1410871
Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation
S. Ramanathan (2001)
10.1103/PhysRevB.69.165104
Photoemission study of the metal-insulator transition inVO2/TiO2(001): Evidence for strong electron-electron and electron-phonon interaction
K. Okazaki (2004)
10.1088/0953-8984/20/46/465204
Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide.
D. Ruzmetov (2008)
10.1103/PhysRevLett.97.266401
Monoclinic and correlated metal phase in VO(2) as evidence of the Mott transition: coherent phonon analysis.
H. Kim (2006)
10.1142/9789814503464_0017
A METHOD OF MEASURING SPECIFIC RESISTIVITY AND HALL EFFECT OF DISCS OF ARBITRARY SHAPE
L. J. V. D. Pauw (1991)
10.1063/1.1653835
Filamentary Conduction in VO2 Coplanar Thin‐Film Devices
J. Duchêne (1971)
10.1103/PhysRevLett.17.1286
Infrared Optical Properties of Vanadium Dioxide Above and Below the Transition Temperature
A. Barker (1966)
10.1103/PhysRevB.10.490
X-ray diffraction study of metallic VO$sub 2$
D. B. Mcwhan (1974)
10.1103/PhysRevLett.95.067405
Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge x-ray absorption.
A. Cavalleri (2005)
10.1088/0957-0233/17/5/S19
1 × 2 optical switch devices based on semiconductor-to-metallic phase transition characteristics of VO2 smart coatings
M. Soltani (2006)
10.1103/PhysRevB.73.165116
Role of electron-electron and electron-phonon interaction effects in the optical conductivity of VO_2
K. Okazaki (2006)
10.1103/PHYSREVB.74.172106
Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films
Kazuki Nagashima (2006)
10.1116/1.580439
Dependence of microstructure and thermochromism on substrate temperature for sputter-deposited VO2 epitaxial films
P. Jin (1997)
10.1103/PHYSREVLETT.97.116402
Transfer of spectral weight and symmetry across the metal-insulator transition in VO(2).
T. Köthe (2006)
10.1103/PhysRevLett.94.026404
Dynamical singlets and correlation-assisted Peierls transition in VO2.
S. Biermann (2005)
10.1103/PHYSREVB.73.195120
Metal-insulator transition in rutile-based VO 2
M. Laad (2006)
10.1143/JPSJ.19.131
The Effect of Pressure on the Metal-to-Insulator Transition in V2O4 and V2O3
S. Minomura (1964)
10.1016/j.physb.2007.10.188
Switching of the Mott transition based on hole-driven MIT theory
H. Kim (2008)
10.1063/1.1654062
Transport and Structural Properties of VO2 Films
C. C. Kwan (1972)
10.1063/1.3050464
Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
C. Ko (2008)
10.1063/1.1762995
Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films
J. Suh (2004)
10.1103/PhysRevLett.35.873
Electron Localization Induced by Uniaxial Stress in Pure V O 2
J. Pouget (1975)
10.1016/J.ELSPEC.2006.12.055
Electronic structure of 3d1 configuration vanadium oxides studied by soft X-ray and hard X-ray photoemission spectroscopy
R. Eguchi (2007)
10.1016/J.SNA.2005.03.063
Fabrication of vanadium oxide micro-optical switches
Hongchen Wang (2005)
10.1063/1.1446215
Metal-insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates
Y. Muraoka (2002)
10.1016/0022-4596(71)90091-0
The two components of the crystallographic transition in VO2
J. Goodenough (1971)
10.1063/1.350285
MILLIMETER-WAVE DIELECTRIC PROPERTIES OF EPITAXIAL VANADIUM DIOXIDE THIN FILMS
P. Hood (1991)
10.1080/14786436108243318
The transition to the metallic state
N. Mott (1961)
10.1063/1.1663568
Influence of stoichiometry on the metal‐semiconductor transition in vanadium dioxide
C. H. Griffiths (1974)
10.1103/PhysRevB.10.1801
Dimerization of a linear Heisenberg chain in in the insulating phases of V1-XCrxO2
J. Pouget (1974)
10.1116/1.1676417
Optical and electrical properties of sputtered vanadium oxide films
F. Y. Gan (2004)
10.3891/acta.chem.scand.10-0623
Studies on Vanadium Oxides. II. The Crystal Structure of Vanadium Dioxide.
G. Andersson (1956)
10.1088/0953-8984/10/25/018
Strong hybridization in vanadium oxides: evidence from photoemission and absorption spectroscopy
R. Zimmermann (1998)
10.1103/PhysRevB.11.4383
Metal-insulator transition in vanadium dioxide
A. Zylbersztejn (1975)
10.1103/PHYSREVB.75.195102
X-ray absorption spectroscopy of vanadium dioxide thin films across the phase-transition boundary
D. Ruzmetov (2007)
10.1016/0169-4332(91)90301-Y
Epitaxial TiO2 and VO2 films prepared by MOCVD (Metal-Organic Chemical Vapor Deposition)
H. Chang (1990)
10.3891/acta.chem.scand.24-0420
A Refinement of the Structure of VO2.
J. Longo (1970)
10.1063/1.2384798
Phase transition and critical issues in structure-property correlations of vanadium oxide
J. Narayan (2006)
10.1103/PhysRev.185.1034
Hydrostatic-pressure dependence of the electronic properties of VO 2 near the semiconductor-metal transition temperature
C. N. Berglund (1969)
10.1103/PhysRevLett.95.196404
Orbital-assisted metal-insulator transition in VO2.
M. W. Haverkort (2005)
10.1103/REVMODPHYS.70.1039
Metal-insulator transitions
M. Imada (1998)
10.1063/1.121999
Mott transition field effect transistor
D. Newns (1998)
10.1103/PhysRevB.48.4359
Resistivity of the high-temperature metallic phase of VO2.
Allen (1993)
10.1063/1.2931006
Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide
C. Ko (2008)
10.1002/ADMA.200700251
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
M. Lee (2007)
10.1088/1367-2630/6/1/052
Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
H. Kim (2004)
10.1007/S10853-006-0261-Y
Correlation between optical, electrical and structural properties of vanadium dioxide thin films
N. R. Mlyuka (2006)
10.1063/1.2001139
Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films
D. Brassard (2005)
10.1116/1.576277
Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films
E. Kusano (1989)
10.1103/PHYSREVB.77.195442
Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films
D. Ruzmetov (2008)
10.1103/PhysRevB.40.5715
Oxygen 1s x-ray-absorption edges of transition-metal oxides.
de Groot FM (1989)
10.1143/JPSJ.21.2422
Hall Effect of Vanadium Dioxide Powder
Isamu Kitahiro (1966)
10.1103/PhysRevLett.72.3389
VO2: Peierls or Mott-Hubbard? A view from band theory.
Wentzcovitch (1994)
10.1103/PHYSREVLETT.99.266402
Understanding correlations in vanadium dioxide from first principles.
M. Gatti (2007)
10.1103/PhysRevB.20.1546
X-ray photoelectron and Auger spectroscopy study of some vanadium oxides
G. A. Sawatzky (1979)
10.1103/PHYSREVB.65.224113
Size effects in the structural phase transition of VO2 nanoparticles
R. López (2002)
10.1088/0022-3719/8/13/016
Moving boundaries and travelling domains during switching of VO2 single crystals
B. Fisher (1975)
10.1016/j.physb.2005.07.032
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse
Byung-Gyu Chae (2005)
10.1063/1.1660505
Properties of Vanadium Dioxide Thermal Filaments
W. J. Kitchen (1971)



This paper is referenced by
10.1063/1.4893577
Surface charge sensing by altering the phase transition in VO2
Suhas Kumar (2014)
X-ray diffraction studies of VO2 thin films
T. Timonen (2014)
10.1002/adma.201705148
Laser Irradiation of Metal Oxide Films and Nanostructures: Applications and Advances.
Haribabu Palneedi (2018)
10.1002/adma.201302046
Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2.
S. Kumar (2013)
10.1116/1.4733995
Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal–insulator transition
Kunio Okimura (2012)
10.1007/S00339-012-7223-9
Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition
Slimane Lafane (2013)
Reconfigurable Metasurfaces in the Infrared
Shuyan Zhang (2018)
Semiconductor-to-Metal Phase Transitions of Vanadium Dioxide (VO2) Thin Films
Jie Jian (2016)
10.1063/1.4939746
The phase transition in VO2 probed using x-ray, visible and infrared radiations
Suhas Kumar (2016)
10.1109/COMMAD.2012.6472342
Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films
Herianto Lim (2012)
Functionalization of polymer electrolytes for electrochromic windows
İlknur Pehlivan (2013)
10.1557/OPL.2013.544
Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films
Heewoo Lim (2012)
10.1063/1.3700210
Stress-induced VO2 films with M2 monoclinic phase stable at room temperature grown by inductively coupled plasma-assisted reactive sputtering
Kunio Okimura (2012)
MASTER'S THESIS X-RAY DIFFRACTION STUDIES OF VO2 THIN FILMS
Jyrki Lappalainen (2014)
10.1134/S1063739718030095
Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure
I. V. Malikov (2018)
10.1063/1.4902924
Current-modulated optical properties of vanadium dioxide thin films in the phase transition region
S. Zhang (2014)
10.7567/1882-0786/AB213B
Structure-insensitive switchable terahertz broadband metamaterial absorbers
Limei Qi (2019)
10.1063/1.4934641
Phase-selective vanadium dioxide (VO2) nanostructured thin films by pulsed laser deposition
B. N. Masina (2015)
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