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Nonvolatile Organic Memory Devices With CdTe Quantum Dots

Hyun-Gyo Kim, Man-Jun Gim, H. Jeon, Minchul Kim, Jun-Ho Jeun, J. Kim, Yong-Sang Kim
Published 2013 · Materials Science

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The nonvolatile organic memory devices were fabricated utilizing CdTe quantum dots (QDs). QDs were used as a hole-trapping component in the memory device. We analyzed the electrical properties of the memory device fabricated with CdTe QDs by measuring the capacitance-voltage characteristics and retention time. A number of holes were trapped in CdTe from pentacene, which formed band bending between pentacene and QD layer. We observed large hysteresis at capacitance-voltage response during the operation of the device. The long retention of programmed state time of 10^4s can be potentially useful in practical applications of non-volatile memory.
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