Online citations, reference lists, and bibliographies.
← Back to Search

Electroforming And Resistive Switching In Silicon Dioxide Resistive Memory Devices

Burt W. Fowler, Yao-Feng Chang, Fei Zhou, Yanzhen Wang, Pai-Yu Chen, Fei Xue, Yen-Ting Chen, Brad Bringhurst, Scott Pozder, Jack C. Lee

Save to my Library
Download PDF
Analyze on Scholarcy

Electroforming and resistive switching data are presented and models are given addressing the unusual operating features of SiO2 resistive memory.