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Electroforming And Resistive Switching In Silicon Dioxide Resistive Memory Devices

Burt W. Fowler, Yao-Feng Chang, Fei Zhou, Yanzhen Wang, Pai-Yu Chen, Fei Xue, Yen-Ting Chen, Brad Bringhurst, Scott Pozder, Jack C. Lee

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Electroforming and resistive switching data are presented and models are given addressing the unusual operating features of SiO2 resistive memory.