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Superior Resistive Switching Memory And Biological Synapse Properties Based On A Simple TiN/SiO2/p-Si Tunneling Junction Structure

Xiaobing Yan, Zhenyu Zhou, Bangfu Ding, Jianhui Zhao, Yuanyuan Zhang

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In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal oxidation growth on a Si substrate annealed at 600 °C.