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Superior Resistive Switching Memory And Biological Synapse Properties Based On A Simple TiN/SiO2/p-Si Tunneling Junction Structure
X. Yan, X. Yan, Zhenyu Zhou, Bangfu Ding, Jianhui Zhao, Yuanyuan Zhang
Published 2017 · Materials Science
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In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal oxidation growth on a Si substrate annealed at 600 °C. After electroforming, the number of cycle times for the SiO2-based tunneling junction device can reach an order of magnitude of greater than 105. The resistances at low and high resistance states and the threshold voltage of the device fluctuated in a very narrow range. More interestingly, excitatory and inhibitory postsynaptic current phenomena (EPSC and IPSC) were observed during the pulse mode measurements, indicating that the device can be used in biological synapse applications. At different measurement temperatures and electric fields, direct, Fowler–Nordheim, and trap-assisted tunneling were responsible for the intrinsic conductance mechanism of the device before and after electroforming. This study provides a convenient approach to prepare simple tunneling junction structures for resistive random access memory applications with superior properties.
This paper references
Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides.
Kyung Jean Yoon (2014)
Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.
L. Ji (2014)
Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.
Q. Luo (2016)
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun (2014)
Tunneling and Polaron Charge Transport through Li2O2 in Li–O2 Batteries
A. Luntz (2013)
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.
T. Ohno (2011)
All-Metal-Nitride RRAM Devices
Zhiping Zhang (2015)
Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach.
D. Carta (2016)
Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si
Yu Muxi (2016)
Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
Shuang Gao (2015)
Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
X. Yan (2014)
Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.
M. Wang (2015)
Metal oxide-resistive memory using graphene-edge electrodes
S. Lee (2015)
Temperature-dependent tunneling electroresistance in Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions
Zheng Wen (2013)
Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.
Byung Joon Choi (2013)
Resistive switching in nanogap systems on SiO2 substrates.
J. Yao (2009)
Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model
Mau-Phon Houng (1999)
Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
W. Hu (2014)
Space-Charge-Limited Currents in Solids
A. Rose (1955)
Short-term memory to long-term memory transition in a nanoscale memristor.
Ting Chang (2011)
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04982b Click here for additional data file.
M. Buckwell (2015)
Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
N. Xu (2008)
Electroforming and resistive switching in silicon dioxide resistive memory devices
B. Fowler (2015)
Study of polarity effect in SiOx-based resistive switching memory
Yao-Feng Chang (2012)
Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
S. Gao (2014)
Bipolar resistive switching and charge transport in silicon oxide memristor
A. Mikhaylov (2015)
Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.
G. Tang (2013)
A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.
F. Zhou (2016)
Low current resistive switching in Cu–SiO2 cells
C. Schindler (2008)
A comparative study of three-terminal Hanle signals in CoFe/SiO2/n+-Si and Cu/SiO2/n+-Si tunnel junctions
Jeonghyeon Lee (2016)
Etching-dependent reproducible memory switching in vertical SiO2 structures
J. Yao (2008)
Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
Y. Chang (2016)
Interface engineered HfO2-based 3D vertical ReRAM
B. Hudec (2016)
Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
H. Zhang (2016)
H. P. Wong (2012)
On the Form of Forgetting
J. Wixted (1991)
Nonvolatile memory elements based on organic materials
J. Scott (2007)
Effective work function engineering for a TiN/XO(X = La, Zr, Al)/SiO2 stack structures
Dongjin Lee (2016)
Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks
Y. C. Bae (2012)
Two-dimensional, three-fluid modeling of capillary plasma discharges in electrothermal mass accelerators
M. J. Esmond (2016)
Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
F. Zhou (2015)
Resistive switches and memories from silicon oxide.
J. Yao (2010)
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Yanzhen Wang (2012)
Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films
X. Yan (2010)
Complementary resistive switches for passive nanocrossbar memories.
E. Linn (2010)
Thermionic Emission, Field Emission, and the Transition Region
E. L. Murphy (1956)
Oxide heterostructure resistive memory.
Yuchao Yang (2013)
Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices.
X. Li (2016)
Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system
S. Li (2013)
Nanoporous silicon oxide memory.
G. Wang (2014)
Schottky Emission Through Thin Insulating Films
P. R. Emtage (1962)
Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film
J. Simmons (1963)
Transition from direct tunneling to field emission in metal-molecule-metal junctions.
Jeremy M. Beebe (2006)
A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States.
S. Nandakumar (2016)
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser (2009)
Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures
Hao Jiang (2016)
Design of high-performance memristor cell using W-implanted SiO2 films
W. Li (2016)
Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
Z. Wang (2012)
Trap‐assisted charge injection in MNOS structures
C. Svensson (1973)
Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films
X. Yan (2014)
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A Boolean OR gate implemented with an optoelectronic switching memristor
Jianhui Zhao (2019)
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.
S. Kim (2018)
Designing carbon conductive filament memristor devices for memory and electronic synapse applications
Zhenyu Zhou (2020)
Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure
Subhranu Samanta (2019)
Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
S. Kim (2017)
A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics
Jingjuan Wang (2018)
Overwhelming coexistence of negative differential resistance effect and RRAM.
T. Guo (2018)
Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
X. Yan (2017)
Analog Synaptic Behavior of a Silicon Nitride Memristor.
S. Kim (2017)
Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors
Xiaojuan Lian (2019)
Switching characteristics in TiO2/ZnO double layer resistive switching memory device
P. Jain (2017)
A carbon-based memristor design for associative learning activities and neuromorphic computing.
Yifei Pei (2020)
Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse
X. Yan (2020)
Synapse behavior characterization and physical mechanism of a TiN/SiOx/p-Si tunneling memristor device
Zhenyu Zhou (2019)
Memristor with Ag-Cluster-Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
X. Yan (2018)
Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.
X. Yan (2019)
Memristive devices based on 2D-BiOI nanosheets and their applications to neuromorphic computing
H. Wang (2020)
Coexistence of Long‐Term Memory and Short‐Term Memory in an SiNx‐Based Memristor
Junhyeok Choi (2020)
An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing
Jianhui Zhao (2019)
Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model
X. Yan (2020)
Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates
X. Yan (2018)
Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory
Hyojong Cho (2020)
Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate
X. Yan (2018)
A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device
T. Guo (2018)
Memristors Based on the Hybrid Structure of Oxide and Boron Nitride Nanosheets Combining Memristive and Neuromorphic Functionalities
Gong Wang (2020)
Optimization of Quantum Yield of Highly Luminescent Graphene Oxide Quantum Dots and Their Application in Resistive Memory Devices
R. Das (2019)
Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?
Adnan Mehonic (2018)
Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity
J. Yin (2018)
Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects
H. Wang (2019)
Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device
X. Wang (2018)
Synaptic learning and memory functions in SiO2:Ag/TiO2 based memristor devices
Dongyang Li (2020)
Effects of Ambient Sensing on SiOx-Based Resistive Switching and Resilience Modulation by Stacking Engineering
Y. Chen (2018)See more