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Low Resistivity HfNx Grown By Plasma-assisted ALD With External Rf Substrate Biasing

S. Karwal, M. A. Verheijen, B. L. Williams, T. Faraz, W. M. M. Kessels, M. Creatore

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Application of an external rf substrate bias during the H2 plasma half cycle leads to a significant decrease in film resistivity resulting from a major reduction of O content and an increase in the Hf3+ oxidation state fraction in HfNx thin films