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Snapback Behavior Of The Postbreakdown I–V Characteristics In Ultrathin SiO2 Films

T. Chen, M. Tse, X. Zeng
Published 2001 · Physics

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With the I–V measurement technique that forced a current to an ultrathin gate oxide and measured the voltage drop, a snapback phenomenon, i.e., the gate oxide was switched from a higher-impedance state to a lower-impedance state suddenly, was observed during the postbreakdown I–V measurement. The snapback could be triggered at a very low measurement current. Single or multiple snapbacks have been observed, and it was found that the occurrence of snapback was a random event. The snapback is explained in terms of the formation of an additional percolation path due to the neutralization of negatively charged traps or the generation of neutral electron traps at certain strategic positions during the measurement.
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Thermally formed conducting filaments in a single-crystalline NiO thin film
Masanori Kawai (2010)
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M. A. Miranda (2012)
CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals
Yongzhi Liu (2007)
Resistive switching in nanogap systems on SiO2 substrates.
J. Yao (2009)
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. Kim (2006)
Anomalous CV curves of Al/SRO/Si structure after electrical stress
Z. Yu (2002)
Relationship Between Current Transport and Electroluminescence in Si + -Implanted
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Gargi Chakraborty (2007)
Electron transport through broken down ultra-thin SiO2 layers in MOS devices
E. Miranda (2004)
Characterization of silicon nanocrystals embedded in SiO2 matrix
Y. Liu (2005)
Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
Z. H. Cen (2009)
CMOS-compatible light emission device based on thin aluminum nitride film containing Al nanocrystals
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Resistive Switching in SiO x-Based Systems
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Random and localized resistive switching observation in Pt/NiO/Pt
J. B. Yun (2007)
Charging Effect on Electrical Characteristics of MOS Structures with Si Nanocrystal Distribution in Gate Oxide
Y. Liu (2004)
Conduction switching in aluminum nitride thin films containing Al nanocrystals
Y. Liu (2008)
Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices
G. Chakraborty (2011)
Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
M. Yang (2009)
Optical and optoelectronic properties of Si nanocrystals embedded in dielectric matrix
L. Ding (2009)
Charging/discharging of silicon nanocrystals embedded in an SiO2 matrix inducing reduction/recovery in the total capacitance and tunneling current
C. Ng (2006)
Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films.
M. Yang (2010)
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
I. K. Yoo (2010)
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films
M. Lin (2010)
Relationship Between Current Transport and Electroluminescence in $\hbox{Si}^{+}$-Implanted $ \hbox{SiO}_{2}$ Thin Films
L. Ding (2009)
SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect
E. Miranda (2019)
Negative resistance characterisation and defective trap exploration in ZnO nonvolatile memory devices
F. C. Chiu (2014)
Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes
E. Miranda (2019)
Random Circuit Breaker Network Model for Unipolar Resistance Switching
S. Chae (2008)
Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices
F. Chiu (2013)
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