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Fabrication And Photoresponse Of A Pn-heterojunction Diode Composed Of Transparent Oxide Semiconductors, P-NiO And N-ZnO

H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, H. Hosono
Published 2003 · Physics

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Transparent trilayered oxide films of ZnO/NiO/indium tin oxide were heteroepitaxially grown on a YSZ (111) substrate by pulsed-laser deposition combined with a solid-phase-epitaxy technique, and were processed to fabricate a p-NiO/n-ZnO diode. The diode exhibited a clear rectifying I–V characteristic with an ideality factor of ∼2 and a forward threshold voltage of ∼1 V. Although the photoresponsivity was fairly weak at the zero-bias voltage, it was enhanced up to ∼0.3 A W−1 through the application of a reverse bias of −6 V under the irradiation of 360 nm light, a value comparable to that of commercial devices.
This paper references
10.1063/1.116062
Thin film diamond photodiode for ultraviolet light detection
M. Whitfield (1996)
10.1063/1.125749
Highly sensitive ultraviolet photodetectors based on Mg-doped hydrogenated GaN films grown at 380 °C
S. Yagi (2000)
10.1126/SCIENCE.1083212
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
K. Nomura (2003)
10.1016/S0038-1098(01)00439-2
Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure
H. Yanagi (2001)
10.1063/1.106819
High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
M. Khan (1992)
10.1063/1.1320038
Time response analysis of ZnSe-based Schottky barrier photodetectors
E. Monroy (2000)
10.1103/PHYSREVLETT.53.2339
Magnitude and origin of the band gap in NiO
G. A. Sawatzky (1984)
10.1103/PHYSREVB.2.2182
Optical Properties of NiO and CoO
R. Powell (1970)
10.1063/1.1542677
ZnO-based transparent thin-film transistors
R. Hoffman (2003)
10.1063/1.1381415
Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes
F. Vigué (2001)
10.1063/1.1448873
Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia
H. Ohta (2002)
10.1063/1.1358364
Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors
I. K. Sou (2001)
10.1063/1.1367315
Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO
H. Ohta (2001)
10.1063/1.1499990
High-efficiency solar cells based on Cu(InAl)Se2 thin films
S. Marsillac (2002)
10.1557/JMR.1999.0191
Effective Sintering Aids for Low-temperature Sintering of AlN Ceramics
K. Watari (1999)
10.1063/1.1536264
Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄)
B. Coppa (2003)
10.1063/1.124337
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
G. Parish (1999)
10.1103/PHYSREVB.30.957
Valence-band photoemission and optical absorption in nickel compounds
A. Fujimori (1984)
10.1063/1.1368378
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films
W. Yang (2001)
10.1063/1.123358
AlGaN metal–semiconductor–metal photodiodes
E. Monroy (1999)
10.1063/1.121122
High-current-density ITOx/NiOx thin-film diodes
W. Lee (1998)



This paper is referenced by
10.1016/J.JNONCRYSOL.2008.06.097
Characteristics of heteroepitaxial Cu2−xMnxO/Nb–SrTiO3 p–n junction
C. K. Lam (2008)
10.1063/1.2939006
p-type field-effect transistor of NiO with electric double-layer gating
H. Shimotani (2008)
10.5772/65124
Laser Ablation Applied for Synthesis of Thin Films: Insights into Laser Deposition Methods
C. Popescu (2016)
10.1016/J.MSSP.2018.04.010
Structure, optical, electrical and thermoelectric properties of solution-processed Li-doped NiO films grown by SILAR
N. Klochko (2018)
10.1016/J.OPTMAT.2016.07.004
A high-sensitivity, fast-response, rapid-recovery UV photodetector fabricated based on catalyst-free growth of ZnO nanowire networks on glass substrate
Forat H. Alsultany (2016)
10.1016/J.JALLCOM.2010.10.180
Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates
Dohyun Oh (2011)
10.1002/PSSA.201228293
Design of p-CuO/n-ZnO heterojunctions by rf magnetron sputtering
K. Saji (2013)
10.1039/C3RA43678K
A facile approach to fabrication of well-dispersed NiO-ZnO composite hollow microspheres
Q. Xie (2013)
10.1063/1.2937124
p-ZnO∕n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism
M. Dutta (2008)
10.1039/C1JM12595H
Mixed mode, ionic-electronic diode using atomic layer deposition of V2O5 and ZnO films
P. Banerjee (2011)
10.1063/1.4891366
Hard X-ray photoelectron spectroscopy of LixNi1-xO epitaxial thin films with a high lithium content.
L. S. R. Kumara (2014)
10.25777/zygx-tn44
Solid Oxide Electrochemical Cells for High Temperature Hydrogen Production: Theory, Fabrication and Characterization
C. Zhou (2018)
10.1117/12.768752
Characteristics of hetero-junction diodes based on ion beam sputtered ZnO thin films
J. Kennedy (2007)
10.1002/PSSA.200404803
The Future Of ZnO Light Emitters
D. Look (2004)
10.1088/0957-4484/26/21/215203
Transparent oxides forming conductor/insulator/conductor heterojunctions for photodetection.
S. Ishii (2015)
10.1063/1.1992666
A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES
Ü. Özgür (2005)
10.1063/1.3072367
X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset
R. Deng (2009)
10.1021/ACS.CHEMMATER.5B03794
High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening
A. Bathia (2016)
10.1016/J.SPMI.2016.10.059
A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters
M. L. Grilli (2016)
10.1016/J.JALLCOM.2016.12.307
Synthesis of porous NiO-In2O3 composite nanofibers by electrospinning and their highly enhanced gas sensing properties
Chao Yan (2017)
10.1016/J.JCRYSGRO.2016.07.010
High hole concentration Li-doped NiZnO thin films grown by photo-assisted metal–organic chemical vapor deposition
Y. Zhao (2016)
10.1063/1.2735677
Anisotropic electric conduction derived from self-organized nanogroove array on Li-doped NiO epitaxial film
A. Matsuda (2007)
10.1002/PSSB.200675101
Preparation and properties of ZnO and devices
N. Izyumskaya (2007)
10.1109/NANO.2008.23
Fabrication and Characterization of White Light Emitting Diodes Based on ZnO Nano-Rods Grown on p-Si
M. Rahman (2008)
10.1080/15533170902858096
Fabrication and Characterization of Boron Doped Ni/Zn Acetate Nanofibers
İ. Uslu (2009)
10.1002/9781118144121.CH29
High-quality epitaxial film growth of superconducting sodium-cobalt oxyhydrate, Na0.3CoO2 · 1.3H2O
K. Sugiura (2011)
10.1039/C3TC31444H
High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing
Namseok Park (2013)
10.1016/B978-008044964-7/50003-0
Function Cultivation in Transparent Oxides Utilizing Natural and Artificial Nanostructures
H. Hosono (2006)
Synthesis And Characterization Of Samarium Doped Nio Nanoparticles
S. Gawali (2020)
10.1021/acsami.7b00759
Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.
B. Das (2017)
10.1038/srep31230
Band gap bowing in NixMg1−xO
Christian A. Niedermeier (2016)
10.1016/j.spmi.2020.106690
Thin film NiO/BaTiO3/ZnO heterojunction diode-based UVC photodetectors
A. K. Hassan (2020)
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