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Increased Terahertz Emission From Thermally Treated GaSb

S. Winnerl, S. Sinning, T. Dekorsy, M. Helm
Published 2004 · Materials Science

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We report on the terahertz (THz) emission from GaSb surfaces with modified surface stochiometry. While very weak emission is observed from virgin GaSb wafers, the emission is significantly increased by a single thermal treatment of the wafers. Optimum emission is observed for 500 °C thermal annealing. The reason for the THz emission is a surface electric field induced by thermal decomposition of the surface, as corroborated by Raman spectroscopy.
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