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High Switching Endurance In TaOx Memristive Devices

J. Yang, M. Zhang, J. P. Strachan, F. Miao, M. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, R. Williams
Published 2010 · Physics

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We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
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