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Reliable Fabrication Of 3 Nm Gaps Between Nanoelectrodes By Electron-beam Lithography.

M. Manheller, S. Trellenkamp, R. Waser, S. Karthäuser
Published 2012 · Materials Science, Medicine

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The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
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