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Resistive Switching Device Technology Based On Silicon Oxide For Improved ON–OFF Ratio—Part I: Memory Devices

A. Bricalli, E. Ambrosi, M. Laudato, M. Maestro, R. Rodríguez, D. Ielmini
Published 2018 ·

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Resistive switching memory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressed by enlarging the resistance window between low-resistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs.
This paper references
10.1002/smll.200901100
Resistive switching in nanogap systems on SiO2 substrates.
J. Yao (2009)
10.1088/0957-4484/22/25/254022
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories.
D. Ielmini (2011)
10.1063/1.3701581
Resistive switching in silicon sub-oxide films
A. Mehonic (2012)
10.1109/TED.2016.2604370
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
Z. Wang (2016)
10.1109/TED.2015.2490545
On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying
B. Traoré (2015)
10.1109/TED.2012.2184545
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
X. Guan (2012)
10.1109/TED.2015.2477135
Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics
S. Ambrogio (2015)
10.1063/1.3304167
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
D. Ielmini (2010)
10.1109/TED.2017.2776085
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices
A. Bricalli (2018)
10.1063/1.368217
UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS
J. McPherson (1998)
10.1109/IEDM.1998.746310
Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions
J. McPherson (1998)
10.1038/nnano.2015.221
Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
A. Wedig (2016)
10.1109/TED.2015.2463104
Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
S. Balatti (2015)
10.1109/LED.2014.2375200
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
A. Prakash (2015)
10.1016/J.MEE.2015.04.044
Engineering ReRAM for high-density applications
A. Calderoni (2015)
10.1109/TED.2014.2313889
Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe
N. Ciocchini (2014)
10.1109/TED.2014.2330202
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise
S. Ambrogio (2014)
10.1109/TED.2011.2167513
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
D. Ielmini (2011)
10.1109/LED.2010.2040799
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
D. Ielmini (2010)
10.1109/TED.2012.2202319
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
F. Nardi (2012)
10.1109/LED.2016.2600574
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
S. Ambrogio (2016)
10.1002/adma.201306250
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory.
S. Ambrogio (2014)
10.1109/NVMT.2007.4389953
Resistive switching in Ag-Ge-Se with extremely low write currents
C. Schindler (2007)
10.1088/0268-1242/31/6/063002
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D. Ielmini (2016)
10.1109/IEDM.2016.7838344
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
A. Bricalli (2016)
10.1147/rd.524.0449
Overview of candidate device technologies for storage-class memory
G. Burr (2008)
10.1109/VLSIC.2015.7231367
Low-power embedded ReRAM technology for IoT applications
M. Ueki (2015)
10.1063/1.2959065
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
K. Kinoshita (2008)
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
H. Lung (2011)
10.1109/TED.2012.2202320
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
S. Larentis (2012)
10.1109/ISSCC.2014.6757457
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme
M. Chang (2014)



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